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参数资料
| 型号： | STB13NK60ZT4 |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N沟道600V的0.48ohm - 13A条TO-220/FP/D2PAK/I2PAK/TO-247齐纳保护SuperMESH⑩功率MOSFET |
| 文件页数： | 3/11页 |
| 文件大小： | 410K |
| 代理商： | STB13NK60ZT4 |
3/11
STB130NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1)
Garanted when external Rg=4.7
and t
< t
.
(5)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2
) Value limited by wire bonding
(6)
Q
C
*
V
C
C
C
See Appendix A
(3)
Pulse width limited by safe operating area.
(7)
Gate charge for synchronous operation
(
4
) Starting T
j
= 25
o
C, I
D
= 45A, V
DD
= 10V .
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 45 A
V
GS
= 10 V
14
224
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=10 V I
D
=90 A V
GS
=10 V
69
13
9
93
nC
nC
nC
Q
oss(6)
Output Charge
V
DS
= 16 V V
GS
= 0 V
27
nC
Q
gls(7)
Third-quadrant Gate Charge
V
DS
< 0 V V
GS
= 10 V
64
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 45 A
V
GS
= 10 V
69
40
54
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
90
360
A
A
V
SD
(5)
Forward On Voltage
I
SD
= 45 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 90 A
V
DD
= 15 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
47
58
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
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