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参数资料
| 型号： | STB15K20.2 |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 47K |
| 代理商： | STB15K20.2 |
Designer's Data Sheet
SOLID STATE DEVICES, INC.
FEATURES:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: T00004D
STA15K7.9 thru
STA15K100
15,000 WATTS
PEAK PULSE POWER
7.9 - 100 VOLTS
UNIDIRECTIONAL
TRANSIENT
VOLTAGE SUPPRESSOR
7.90-100 Volt Unidirectional
Smaller than 704-15K36 and 704-15K36T Types
Hermetically Sealed
Meets all environmental requirements of MIL-PRF-19500
Custom configurations available
TX and TXV Screening Available
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
Protection of Voltage Sensitive Components
Protection Against Power Interuption
Lightning Protection
Steady State Power Dissipation
Stand Off Voltage
5.6-75
V
VRWM
60
W
P
D
Note:
SSDI Transient Suppressors offer standard Breakdown Voltage Tolerances of + 10%
(A) and + 5% (B). For other Voltage and Voltage Tolerances, contact SSDI's Marketing
Department
Peak Pulse Power @ 1.0 msec
P
PP
15,000
APPLICATIONS:
Peak Pulse Power and Steady State
Power Derating
Peak Pulse Power and Pulse Width
W
See Graph
-65
°C to +175°C
Package shown is standard configuration. SSDI can
custom design your module with terminals that meet
your unique design criteria. Additionally, SSDI can
package these devices with an irregular footprint or offset
mounting positions. This data sheet is meant to serve as
an example of SSDI's Transient Protection Module
Capabilities. For custom configurations, please contact
SSDI's Marketing Department.
AMBIENT TEMPERATURE (
°C)
PEAK PULSE POWER VS. TEMPERATURE DERATING CURVE
PEAK
PULSE
POWER
(%
Rated
25
°C
Power)
MMAXIMUM RATINGS
.43 MAX
.670±.030
.335±.030
2.00
MAX
1.370
1.330
2x
.135
.115
.330
.300
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相关代理商/技术参数 |
参数描述 |
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| STB15N25 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB15N65M5 | 功能描述:MOSFET N-Ch 650V 0.308 Ohm 11A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB15N80K5 | 功能描述:MOSFET N-Ch 800V 0.3Ohm typ SuperMESH V 14A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB15NK50Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB15NK50Z-1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH? Power MOSFET |
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