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参数资料
| 型号： | STB160NF03LT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 160A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 160A章一（d）|对263AB |
| 文件页数： | 1/9页 |
| 文件大小： | 153K |
| 代理商： | STB160NF03LT4 |
1/9
February 2001
STB160NF03L
N-CHANNEL 30V - 0.0021
- 160A D2PAK
STripFET
POWER MOSFET
(1) Limited by Package
(2) I
SD
≤
100A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.0021
I
LOW THRESHOLD DRIVE
I
ULTRA LOW ON-RESISTANCE
I
VERY LOW GATE CHARGE
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
“Single
Feature
APPLICATIONS
I
BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
I
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(1)
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB160NF03L
30 V
< 0.0030
160 A
Parameter
Value
Unit
30
V
30
V
±
15
V
160
A
113
A
640
A
300
W
2
W/
°
C
J
E
AS
(2)
Single Pulse Avalanche Energy
2
T
stg
Storage Temperature
–65 to 175
°
C
°
C
T
j
Max. Operating Junction Temperature
175
D
2
PAK
(TO-263)
1
3
INTERNAL SCHEMATIC DIAGRAM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STB160NF3LL | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET⑩ II POWER MOSFET |
| STB160NF3LL_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 30V - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET |
| STB160NF3LLT4 | 功能描述:MOSFET N-Ch 30 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB16N65M5 | 功能描述:MOSFET N-Ch MDMesh V 650V 0.270 Ohm 12A D2PAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STB16NB25 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET |
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