- 您现在的位置：买卖IC网 > PDF目录31378 > STB60K490S (SOLID STATE DEVICES INC) 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE PDF资料下载
参数资料
| 型号： | STB60K490S |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 77K |
| 代理商： | STB60K490S |
STA60K79S thru
STA60K1000S
Solid State Devices, Inc.
14701 Firestone Blvd, La Mirada, Ca 90638
Phone: (562) 404-4474
Fax: (562) 404-1773
ssdi@ssdi-power.com
www.ssdi-power.com
ELECTRICAL CHARACTERISTICS (note 2)
Break Down (note 1)
Max Reverse Stand Off
Peak Pulse Clamping
Part
Number
(note 4)
Nominal
Voltage
Test
Current
Voltage
Reverse
Leakage
Current
Voltage
(Max)
@ Current
tp=1ms
(note 3)
Maximum
Continuous
Current
Max
Temperature
Coefficient
VBR
@ IBRT
VRWM
IR@VRWM
VC
IPP
IRM
TC
Volts
mA
Volts
A
Volts
Amps
%/°C
STA60K79S
STA60K89S
STA60K98S
STA60K107S
STA60K110S
STA60K127S
STA60K135S
STA60K150S
STA60K167S
STA60K180S
STA60K202S
STA60K226S
STA60K245S
STA60K279S
STA60K305S
STA60K340S
STA60K360S
STA60K390S
STA60K450S
STA60K490S
STA60K510S
STA60K560S
STA60K620S
STA60K680S
STA60K750S
STA60K820S
STA60K910S
STA60K1000S
79
89
98
107
110
127
135
150
167
180
202
226
245
279
305
340
360
390
450
490
510
560
620
680
750
820
910
1000
700
600
500
400
300
260
200
160
120
100
80
60
48
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
300
330
360
390
430
470
510
560
620
680
750
6000
4800
160
80
60
40
16
8
145
150
160
175
185
195
210
230
250
270
300
335
360
400
435
470
520
550
600
650
700
780
870
930
1033
1135
1265
1385
512
480
436
400
372
348
316
272
256
228
208
188
172
156
140
128
120
108
100
92
84
76
68
64
56
52
48
44
5.00
4.60
4.08
3.80
3.44
3.08
2.80
2.40
2.20
2.00
1.76
1.56
1.44
1.24
1.12
1.04
0.96
0.84
0.72
0.70
0.68
0.64
0.60
0.52
0.48
0.44
0.40
0.36
.03
.05
.06
.07
.08
.09
PEAK PULSE POWER VS. PULSE WIDTH
CURRENT PULSE WAVEFORM
STEADY STATE POWER DERATING
PE
A
K
PU
L
S
E
PO
W
E
R
(kW
)
%
PE
AK
VAL
UE
ST
E
ADY
S
T
AT
E
POW
E
R
(%
of
25
°C
Ra
te
d
P
o
w
e
r)
PULSE WIDTH
CASE TEMPERATURE (
°C)
For optional high reliability screening or higher zener voltages, consult SSDI MARKETING Department.
Notes:
1.
All voltages are measured with automated test set using 35 msec test time. Longer or shorter test times will have a corresponding effect on the measured value
due to heating effects.
2.
Unless specified otherwise, ratings based on 25° C case temperature.
3.
Pulse width (tp) is defined as the time from rated peak pulse current IPP to the point where peak pulse current decayed to 50% of rated IPP.
(10s X 1000s waveform as defined by R.E.A.)
4.
Part Number- For 5% Voltage Tolerance, specify “B” in place of “A”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: T00014D
DOC
相关PDF资料 |
PDF描述 |
|---|---|
| STB60K79S | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| STB60K98S | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| STB60K305S | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| STB60K820S | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| STB60K127S | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB60N03L-10 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60N06-14 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60N06-14-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-262AA |
| STB60N06HDT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| STB60N55F3 | 功能描述:MOSFET STripFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。