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参数资料
| 型号： | STB6NC60T4 |
| 英文描述： | Resettable Fuse; Operating Voltage Max:6V; Holding Current:1.5uA; Tripping Current:3uA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Steady State Current Max:40A; Voltage Rating:6V |
| 中文描述： | N沟道600V的1.0欧姆- 6A条- TO-220/TO220FP/I2PAK功率MOSFET的网格二世 |
| 文件页数： | 3/10页 |
| 文件大小： | 130K |
| 代理商： | STB6NC60T4 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
R
G
= 47
(see test circuit, figure 3)
V
DD
= 480 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 480 V
I
D
= 3 A
V
GS
= 10 V
35
90
50
125
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 6 A
V
GS
= 10 V
200
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 3 A
V
GS
= 10 V
54
8
23
75
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 6 A
V
GS
= 10 V
80
20
115
110
30
155
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
6.5
26
A
A
V
SD
(
)
I
SD
= 6.5 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A
V
DD
= 100 V
(see test circuit, figure 5)
600
9
30
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimitedby safe operating area
Safe Operating Area
ThermalImpedance
STB6NA60
3/10
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相关代理商/技术参数 |
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| STB6NC80 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
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| STB6NC80Z-1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STB6NC80ZT4 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET |
| STB6NC90Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
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