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参数资料
| 型号： | STB9NB60-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-262AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 9A条（丁）|对262AA |
| 文件页数： | 3/13页 |
| 文件大小： | 581K |
| 代理商： | STB9NB60-1 |
3/13
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
ELECTRICAL CHARACTERISTICS
(TCASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 3.5 A
0.85
0.95
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 3.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
5.3
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
1110
135
30
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 480 V
72
pF
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480 V, I
D
= 7 A,
V
GS
= 10V
Min.
Typ.
19
17
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
38
7
21
53
nC
nC
nC
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 300 V, I
D
= 7 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
43
15
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
11
8
20
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
7
28
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 7 A, V
GS
= 0
I
SD
= 7 A, di/dt = 100A/μs
V
DD
= 30V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
480
3.5
14.5
ns
μC
A
相关PDF资料 |
PDF描述 |
|---|---|
| STB9NB60T4 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-263AB |
| STB9NK60Z-1 | CONNECTOR ACCESSORY |
| STB9NK60ZFD | N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH POWER MOSFET |
| STF9NK60ZFD | Fuse Holder; Fuse Size/Group:13/32 x 1-1/2 "; Body Material:Thermoplastic; Leaded Process Compatible:Yes; Mounting Type:Screw/Quick Connect RoHS Compliant: Yes |
| STP9NK60ZFD | N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STB9NB60T4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-263AB |
| STB9NC60 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh⑩II MOSFET |
| STB9NC60-1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh⑩II MOSFET |
| STB9NK50Z | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 500V 7.2A D2PAK |
| STB9NK50ZFP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.72ohm - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩ Power MOSFET |
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