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参数资料
| 型号： | STD10PF06-1 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA |
| 中文描述： | 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 10A条（丁）|对251AA |
| 文件页数： | 1/10页 |
| 文件大小： | 171K |
| 代理商： | STD10PF06-1 |
1/10
December 2002
STD100NH02L
N-CHANNEL 20V - 0.0038
- 60A DPAK/IPAK
STripFET
III POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0038
@ 10 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
The STD100NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET
technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
TYPE
V
DSS
R
DS(on)
I
D
STD100NH02L
20 V
< 0.0048
60 A(#)
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(#)
Drain Current (continuous) at T
C
= 25
°
C
I
D
(#)
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(#) Value limited by wire bonding
(1) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 10V
Parameter
Value
20
20
±
20
60
60
240
100
0.67
800
Unit
V
V
V
A
A
A
W
W/
°
C
mJ
-55 to 175
°
C
INTERNAL SCHEMATIC DIAGRAM
相关PDF资料 |
PDF描述 |
|---|---|
| STD10PF06T4 | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA |
| STD10PF06 | P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET |
| STD10 | Fuse |
| STD16 | Fuse |
| STD25 | Fuse |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STD10PF06T4 | 功能描述:MOSFET P-Ch 60 Volt 10 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STD10PF06T4 | 制造商:STMicroelectronics 功能描述:MOSFET P SMD D-PAK |
| STD10PF06T4 | 制造商:STMicroelectronics 功能描述:MOSFET |
| STD10PF06T4-CUT TAPE | 制造商:ST 功能描述:STD10PF06 Series P-Channel 60 V 0.2 Ohm STripFET?II POWER MosFet - TO-252 |
| STD10S30 | 制造商:Infineon Technologies AG 功能描述: |
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