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| 型号： | STD110N02RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 24V 12.5A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | * |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3440pF @ 20V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD110N02R, STD110N02R
Power MOSFET
24 V, 110 A, N ? Channel DPAK
Features
? Planar HD3e Process for Fast Switching Performance
? Low R DS(on) to Minimize Conduction Loss
? Low C iss to Minimize Driver Loss
? Low Gate Charge
? Optimized for High Side Switching Requirements in
High ? Efficiency DC ? DC Converters
? AEC Q101 Qualified ? STD110N02R
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
24 V
http://onsemi.com
R DS(on) TYP
4.1 m W @ 10 V
N ? Channel
D
I D MAX
110 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
24
± 20
Unit
V
V
G
S
3
Thermal Resistance ? Junction ? to ? Case
Total Power Dissipation @ T C = 25 ° C
Drain Current
? Continuous @ T C = 25 ° C, Chip
? Continuous @ T C = 25 ° C
Limited by Package
? Continuous @ T A = 25 ° C
Limited by Wires
? Single Pulse (t p = 10 m s)
R q JC
P D
I D
I D
I D
I D
1.35
110
110
110
32
110
° C/W
W
A
A
A
A
4
1 2
3
CASE 369AA
1
2
CASE 369D
4
Thermal Resistance
? Junction ? to ? Ambient (Note 1)
? Total Power Dissipation @ T A = 25 ° C
? Drain Current ? Continuous @ T A = 25 ° C
R q JA
P D
I D
52
2.88
17.5
° C/W
W
A
DPAK
(Surface Mount)
STYLE 2
DPAK
(Straight Lead)
STYLE 2
4
Drain
Thermal Resistance
? Junction ? to ? Ambient (Note 2)
? Total Power Dissipation @ T A = 25 ° C
? Drain Current ? Continuous @ T A = 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vdc,
I L = 15.5 Apk, L = 1.0 mH, R G = 25 W )
R q JA
P D
I D
T J , T stg
E AS
100
1.5
12.5
? 55 to
175
120
° C/W
W
A
° C
mJ
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Drain
3
Source
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, (1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
1
Gate
2
Drain
Y = Year
WW = Work Week
T110N2 = Device Code
G = Pb ? Free Package
1 2 3
Gate Drain Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 10
1
Publication Order Number:
NTD110N02R/D
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相关代理商/技术参数 |
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|---|---|
| STD110N8F6 | 功能描述:MOSFET N-CH 80V 80A DPAK 制造商:stmicroelectronics 系列:STripFET? F6 包装:剪切带（CT） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:80V 电流 - 连续漏极（Id）（25°C 时）:80A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:6.5 毫欧 @ 40A，10V 不同 Id 时的 Vgs（th）（最大值）:4.5V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:150nC @ 10V 不同 Vds 时的输入电容（Ciss）:9130pF @ 40V 功率 - 最大值:167W 工作温度:-55°C ~ 175°C（TJ） 安装类型:表面贴装 封装/外壳:TO-252-3，DPak（2 引线+接片），SC-63 供应商器件封装:DPAK 标准包装:1 |
| STD110NH02L | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFET⑩ III POWER MOSFET |
| STD110NH02L_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET |
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| STD111 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:STD111|Data Sheet |
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