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参数资料
| 型号： | STD40NF3LL |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 30V - 0.0095 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET |
| 中文描述： | N沟道30V的- 0.0095欧姆- 40A条的DPAK低栅极电荷STripFET功率MOSFET |
| 文件页数： | 1/6页 |
| 文件大小： | 45K |
| 代理商： | STD40NF3LL |
STD40NF3LL
N-CHANNEL 30V - 0.0095
- 40A DPAK
LOW GATE CHARGE STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.0115
@ 4.5V
I
OPTIMAL R
DS(on)
x Q
g
TRADE-OFF @ 4.5V
I
CONDUCTION LOSSESREDUCED
I
SWITCHING LOSSESREDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size
” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramountimportance.
APPLICATIONS
I
SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
May 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
30
V
±
15
40
V
A
I
D
28
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
160
A
55
W
0.37
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
)
Pulse widthlimited by safe operating area
175
TYPE
V
DSS
R
DS(on)
< 0.0115
I
D
STD40NF3LL
30 V
40 A
ADD SUFFIX ”T4”FOR ORDERING IN TAPE & REEL
1
3
DPAK
TO-252
(Suffix ”T4”)
1/6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STD40NF3LL_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 30V - 0.009ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET |
| STD40NF3LLT4 | 功能描述:MOSFET N-Ch 30 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STD410BLK | 功能描述:LED 安装硬件 .2" DIA X .41" BLACK RoHS:否 制造商:Bivar 产品:LED Mounting Clips LED 大小:5 mm 材料:Nylon 颜色:Black 主体长度:4.4 mm 面板厚度尺寸: 封装:Bulk |
| STD410S | 制造商:SAMHOP 制造商全称:SAMHOP 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| STD412S | 制造商:SAMHOP 制造商全称:SAMHOP 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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