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参数资料
| 型号： | STD5NM60T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-252AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5A条（丁）|对252AA |
| 文件页数： | 1/8页 |
| 文件大小： | 87K |
| 代理商： | STD5NM60T4 |
1/8
December 2000
STD5N20
N-CHANNEL 200V - 0.6
- 5A DPAK
MESH OVERLAY
MOSFET
I
TYPICAL R
DS
(on) = 0.6
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
ADD SUFFIX “T4” FOROREDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD5N20
200 V
< 0.8
5 A
Parameter
Value
200
Unit
V
V
DGR
200
V
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Gate- source Voltage
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
±
20
V
5
A
3.5
A
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
20
A
45
W
0.36
W/
°
C
V/ns
°
C
°
C
dv/dt (1)
Peak Diode Recovery voltage slope
5
T
stg
Storage Temperature
–65 to 150
T
j
Max. Operating Junction Temperature
150
(1)I
SD
≤
5A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(**) Limited only by Maximum Temperature Allowed
INTERNAL SCHEMATIC DIAGRAM
1
3
TO-252
DPAK
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