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参数资料
| 型号： | STD60NF55L-1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT, IPAK-3 |
| 文件页数： | 9/14页 |
| 文件大小： | 438K |
| 代理商： | STD60NF55L-1 |
Electrical characteristics
STD60NF55L - STD60NF55L-1
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250A, VGS =0
55
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,
TC = 125°C
1
10
A
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 15V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250A
1
2
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
0.012
0.014
0.015
0.017
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Forward
transconductance
VDS = 10V, ID = 30A
35
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1950
390
130
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 25V, ID = 30A
RG =4.7 VGS = 4.5V
(see Figure 12)
30
180
80
35
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 40V, ID = 60A,
VGS = 5V, RG =4.7
(see Figure 13)
40
10
20
56
nC
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