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参数资料
| 型号： | STD8N06-1 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-251 |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 8A条（丁）|至251 |
| 文件页数： | 3/10页 |
| 文件大小： | 171K |
| 代理商： | STD8N06-1 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
R
G
= 47
(see test circuit, figure 3)
V
DD
= 48 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 48 V
I
D
= 4 A
V
GS
= 10 V
14
75
20
100
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 8 A
V
GS
= 10 V
240
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 8 A
V
GS
= 10 V
13
7
4
20
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 48 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 8 A
V
GS
= 10 V
16
22
45
25
30
60
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
8
32
A
A
V
SD
(
)
t
rr
I
SD
= 8 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8 A
V
DD
= 25 V
(see test circuit, figure 5)
70
0.18
5
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD8N06
3/10
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