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参数资料
| 型号： | STD95NH02L |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 24V - 0.0039ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFET |
| 中文描述： | N沟道24V的- 0.0039ohm - 80A条的DPAK超低MOSFET的栅极电荷STripFET |
| 文件页数： | 3/11页 |
| 文件大小： | 319K |
| 代理商： | STD95NH02L |
3/11
STD95NH02L
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
g
fs
(4)
C
iss
C
oss
C
rss
Table 7: Source Drain Diode
Symbol
I
SD
Source-drain Current
I
SDM
Source-drain Current (pulsed)
V
SD
(4)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(4). Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(5). Q
oss
= C
oss
*
V
in
, C
oss
= C
gd
+C
ds
. See Appendix A.
(6). Gate charge for Syncronous Operation.
Parameter
Test Conditions
V
DS
= 10 V
,
I
D
= 10 A
V
DS
= 15V, f = 1 MHz, V
GS
= 0
Min.
Typ.
30
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
2070
990
90
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Q
oss
(5)
Q
gls
(6)
R
G
V
DD
= 12 V, I
D
= 40 A,
R
G
= 4.7
V
GS
= 10 V
(see Figure 16)
20
110
47
20
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=
12 V, I
D
= 80 A,
V
GS
= 5 V
(see Figure 19)
17
7.6
6.8
nC
nC
nC
Output Charge
V
DS
= 19 V, V
GS
= 0 V
V
DS
< 0 V, V
GS
= 5 V
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
22.6
nC
Third-Quadrant Gate Charge
15
nC
Gate Input Resistance
1.8
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
80
A
320
A
I
SD
= 40A, V
GS
= 0
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 80A, di/dt = 100 A/μs,
V
DD
=20 V, T
j
= 150
°
C
(see Figure 16)
42
50.4
2.4
ns
nC
A
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