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参数资料
| 型号： | STF20NM60A |
| 英文描述： | Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:3mA; Current, It av:4A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes |
| 中文描述： | N沟道600V的- 0.25OHM - 20A条I2PAK/TO-220/TO-220FP MDMesh功率MOSFET |
| 文件页数： | 4/7页 |
| 文件大小： | 134K |
| 代理商： | STF20NM60A |
4
2001 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
Applications Information
STF201-22 & STF201-30
Figure 1 - STF201 Circuit Diagram
Device Connection
The STF201 is designed to provide termination, EMI
filtering and ESD protection for two USB I/O lines. The
equivalent circuit diagram is shown in Figure 1. The
device is connected as follows:
USB data lines are routed through the STF201 for
easy implementation and optimum pc board layout.
Pin 1 is connected to the voltage supply line. The
input of the D+ line is routed into pin 2 and out of
pin 5. The input of the D- line is connected at pin 3
and the output at pin 4. Pin 6 is connected to
ground. The ground connection should be made
directly to the ground plane for best results. The
path length is kept as short as possible to reduce
the effects of parasitic inductance in the board
traces.
"
USB Port Design Considerations
The Universal Serial Bus (USB) specification requires
termination and filtering components for proper opera-
tion. In addition, an open USB socket is vulnerable to
hazardous ESD discharges in excess of 15kV. These
discharges can may occur on the data lines or the
voltage bus. The STF201 is an easily implemented
solution designed to meet the termination & EMI filter
requirements of the USB specification revision 1.1. It
also provides ESD protection to IEC 61000-4-2, level
4.
A simplified USB port is shown in Figure 3. USB line
termination is achieved with series resistors on both
the D+ and D- lines. These resistors preserve signal
integrity by matching the cable impedance to that of
the differential driver. 15k
pull-down resistors are
used to identify a downstream port while an upstream
port is identified with a 1.5K
pull up resistor on either
the D+ (full speed devices) or the D- (low speed de-
vices) data line. Capacitors are used to bypass high
frequency energy to ground and for edge rate control
of the USB signals. TVS diodes are added for ESD
protection of both (D+ & D-) data lines and the voltage
bus (V
). A power distribution switch and voltage
regulator provide the power management functions of
the port.
Semtech provides a complete solution to simplify USB
port design (Figure 4). The STF201 & STF202 inte-
Figure 2 - STF201 Connection Diagram
1
2
3
4
5
6
grate all of the components necessary for line termina-
tion, bidirectional EMI filtering, and ESD protection on
downstream (STF201) or upstream (STF202) ports.
The SC5826 is a dual port power switch that provides
individual or ganged port switching, fault reporting, and
inrush current limiting as required by the USB specifica-
tion. The SC5205 ULDO provides a stable voltage to
the USB controller.
Board Placement & layout Guidelines.
Board layout and placement of the STF201 play a
critical role in EMI & ESD suppression. Designing a
USB hub to meet EMI & ESD immunity requirements
requires a combination of optimum component place-
ment, trace routing, and good circuit design practices.
Some general guidelines are given below:
Avoid running D+ & D- signal line traces near high
speed clock lines or similar signal lines.
"
Avoid running critical signal lines near board edges.
"
Locate the USB controller chip physically near the
USB connectors.
"
Place the STF201 near the USB connector to
restrict transient coupling.
"
Minimize the path length between the USB connec-
tor and the STF201 as well as between the USB
controller and the STF201.
"
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STF20NM60D | 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 20A TO-220FP |
| STF20NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STF21N65M5 | 功能描述:MOSFET N-channel 650 V 0.175 17A Mdmesh RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STF21N65M5(045Y) | 制造商:STMicroelectronics 功能描述:N-channel 650 V, 0.150 |
| STF21N90K5 | 功能描述:MOSFET N-Ch 900V 0.25 Ohm 18.5A SuperMESH 5 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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