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参数资料
| 型号： | STK15C88-3W45I |
| 元件分类： | SRAM |
| 英文描述： | 32K X 8 NON-VOLATILE SRAM, 45 ns, PDIP28 |
| 封装： | 0.600 INCH, PLASTIC, DIP-28 |
| 文件页数： | 1/10页 |
| 文件大小： | 291K |
| 代理商： | STK15C88-3W45I |
September 2002
1
STK15C88-3
32K x 8 AutoStorenvSRAM
3.3V QuantumTrap CMOS
Nonvolatile Static RAM
FEATURES
Nonvolatile Storage without Battery Problems
Directly Replaces 32K x 8 Static RAM, Battery-
Backed RAM or EEPROM
35ns, 45ns and 55ns Access Times
STORE to EEPROM Initiated by Software or
AutoStore on Power Down
RECALL to SRAM Initiated by Software or
Power Restore
8mA Typical I
CC at 200ns Cycle Time
Unlimited READ, WRITE and RECALL Cycles
1,000,000 STORE Cycles to EEPROM
100-Year Data Retention over Full Industrial
Temperature Range
3.0V-3.6V Operation
Commercial and Industrial Temperatures
28-Pin PDIP and SOIC Packages
DESCRIPTION
The STK15C88-3 is a fast SRAM with a nonvolatile
EEPROM
element incorporated in each static mem-
ory cell. The SRAM can be read and written an
unlimited number of times, while independent non-
volatile data resides in EEPROM. Data transfers from
the SRAM to the EEPROM (the STORE operation) can
take place automatically on power down using
charge stored in system capacitance. Transfers
from the EEPROM to the SRAM (the RECALL opera-
tion) take place automatically on restoration of
power. Initiation of STORE and RECALL cycles can
also be controlled by entering control sequences on
the SRAM inputs. The STK15C88-3 is pin-compati-
ble with 32k x 8 SRAMs and battery-backed SRAMs,
allowing direct substitution while enhancing perfor-
mance. A similar device (STK16C88-3) with an
internally integrated capacitor is available for appli-
cations with very fast power-down slew rates. The
STK14C88-3, which uses an external capacitor, is
another alternative for these applications.
BLOCK DIAGRAM
EEPROM ARRAY
512 x 512
STORE
RECALL
COLUMN I/O
COLUMN DEC
STATIC RAM
ARRAY
512 x 512
ROW
DE
CODE
R
INPU
T
B
U
FFERS
STORE/
RECALL
CONTROL
POWER
CONTROL
A6
A7
A11
A12
A13
A14
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
SOFTWARE
DETECT
VCC
A0 - A13
G
E
W
A9
A8
A10
A3
A2
A0 A1
A4
A5
PIN CONFIGURATIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VCC
A13
A8
A9
A11
G
W
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
28 - 300 PDIP
28 - 600 PDIP
28 - 300 SOIC
28 - 350 SOIC
PIN NAMES
A0 - A14
Address Inputs
W
Write Enable
DQ0 - DQ7
Data In/Out
E
Chip Enable
G
Output Enable
VCC
Power (+ 5V)
VSS
Ground
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STK15C88-N35I | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| STK15C88-NF25 | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| STK15C88-NF25I | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| STK15C88-NF25ITR | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| STK15C88-NF25TR | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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