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参数资料
| 型号： | STK16C68-W25I |
| 英文描述： | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA |
| 中文描述： | NOVRAM | 8KX8 |的CMOS |双酯| 28脚|塑料 |
| 文件页数： | 4/9页 |
| 文件大小： | 95K |
| 代理商： | STK16C68-W25I |
STK16C68
July 1999
4-76
SRAM WRITE CYCLES #1 & #2
(V
CC
= 5.0V
±
10%)
b
Note j:
Note k:
If W is low when E goes low, the outputs remain in the high-impedance state.
E or W must be
≥
V
IH
during address transitions.
SRAM WRITE CYCLE #1
: W Controlled
k
SRAM WRITE CYCLE #2
: E Controlled
k
NO.
SYMBOLS
PARAMETER
STK16C68-20
STK16C68-25
STK16C68-35
STK16C68-45
UNITS
#1
#2
Alt.
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
12
t
AVAV
t
AVAV
t
WC
Write Cycle Time
20
25
35
45
ns
13
t
WLWH
t
WLEH
t
WP
Write Pulse Width
15
20
25
30
ns
14
t
ELWH
t
ELEH
t
CW
Chip Enable to End of Write
15
20
25
30
ns
15
t
DVWH
t
DVEH
t
DW
Data Set-up to End of Write
8
10
12
15
ns
16
t
WHDX
t
EHDX
t
DH
Data Hold after End of Write
0
0
0
0
ns
17
t
AVWH
t
AVEH
t
AW
Address Set-up to End of Write
15
20
25
30
ns
18
t
AVWL
t
AVEL
t
AS
Address Set-up to Start of Write
0
0
0
0
ns
19
t
WHAX
t
EHAX
t
WR
Address Hold after End of Write
0
0
0
0
ns
20
t
WLQZ
i, j
t
WZ
Write Enable to Output Disable
7
10
13
15
ns
21
t
WHQX
t
OW
Output Active after End of Write
5
5
5
5
ns
PREVIOUS DATA
DATA OUT
E
ADDRESS
12
t
AVAV
W
16
t
WHDX
DATA IN
1
t
WHAX
13
t
WLWH
18
t
AVWL
17
t
AVWH
DATA VALID
20
t
WLQZ
15
t
DVWH
HIGH IMPEDANCE
21
t
WHQX
14
t
ELWH
DATA OUT
E
ADDRESS
12
t
AVAV
W
DATA IN
13
t
WLEH
1 7
t
AVEH
DATA VALID
HIGH IMPEDANCE
14
t
ELEH
18
t
AVEL
19
t
EHAX
15
t
DVEH
16
t
EHDX
相关PDF资料 |
PDF描述 |
|---|---|
| STK16C68-W35 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
| STK16C68-W35I | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA |
| STK16C68-W45 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
| STK16C68-W45I | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20uA |
| STK16C88-S20 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STK16C88-3WF35 | 功能描述:NVRAM 32Kbx8 3.0-3.6V AutoStorePlus RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| STK16C88-3WF35I | 功能描述:NVRAM 32Kbx8 3.0-3.6V AutoStorePlus RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| STK16C88-3WF35ITR | 制造商:Cypress Semiconductor 功能描述:STK16C88-3WF35ITR - Tape and Reel |
| STK16C88-3WF35TR | 制造商:Cypress Semiconductor 功能描述:STK16C88-3WF35TR - Tape and Reel |
| STK16C88-WF25 | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStorePlus RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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