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参数资料
| 型号： | STK16C68-W45 |
| 英文描述： | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA |
| 中文描述： | NVRAM中（EEPROM的基础） |
| 文件页数： | 3/9页 |
| 文件大小： | 95K |
| 代理商： | STK16C68-W45 |
STK16C68
July 1999
4-75
SRAM READ CYCLES #1 & #2
(V
CC
= 5.0V
±
10%)
b
Note g:
Note h:
Note i:
W must be high during SRAM READ cycles and low during SRAM WRITE cycles.
I/O state assumes E, G < V
IL
and W > V
IH
; device is continuously selected.
Measured + 200mV from steady state output voltage.
SRAM READ CYCLE #1:
Address Controlled
g, h
SRAM READ CYCLE #2:
E
Controlled
g
NO.
SYMBOLS
PARAMETER
STK16C68-20
STK16C68-25
STK16C68-35
STK16C68-45
UNITS
#1, #2
Alt.
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
1
t
ELQV
t
AVAV
g
t
AVQV
h
t
ACS
Chip Enable Access Time
20
25
35
45
ns
2
t
RC
Read Cycle Time
20
25
35
45
ns
3
t
AA
Address Access Time
22
25
35
45
ns
4
t
GLQV
t
AXQX
h
t
OE
Output Enable to Data Valid
8
10
15
20
ns
5
t
OH
Output Hold after Address Change
5
5
5
5
ns
6
t
ELQX
t
EHQZ
i
t
LZ
Chip Enable to Output Active
5
5
5
5
ns
7
t
HZ
Chip Disable to Output Inactive
7
10
13
15
ns
8
t
GLQX
t
GHQZ
i
t
ELICCH
f
t
EHICCL
e, f
t
OLZ
Output Enable to Output Active
0
0
0
0
ns
9
t
OHZ
Output Disable to Output Inactive
7
10
13
15
ns
10
t
PA
Chip Enable to Power Active
0
0
0
0
ns
11
t
PS
Chip Disable to Power Standby
25
25
35
45
ns
DATA VALID
5
t
AXQX
3
t
AVQV
DQ (DATA OUT)
ADDRESS
2
t
AVAV
6
t
ELQX
STANDBY
DATA VALID
8
t
GLQX
4
t
GLQV
DQ (DATA OUT)
E
ADDRESS
2
t
AVAV
G
I
CC
ACTIVE
1
t
ELQV
10
t
ELICCH
11
t
EHICCL
7
t
EHQZ
9
t
GHQZ
相关PDF资料 |
PDF描述 |
|---|---|
| STK16C68-W45I | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20uA |
| STK16C88-S20 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA |
| STK16C88-S25 | NVRAM (EEPROM Based) |
| STK16C88-S25I | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:225A; Gate Trigger Current Max, Igt:30uA |
| STK16C88-S35 | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA |
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