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参数资料
| 型号： | STK16C88-W35I |
| 英文描述： | SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):70A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50mA |
| 中文描述： | NOVRAM | 32KX8 |的CMOS |双酯| 28脚|塑料 |
| 文件页数： | 8/9页 |
| 文件大小： | 95K |
| 代理商： | STK16C88-W35I |
STK16C68
July 1999
4-80
1.
2.
3.
4.
5.
6.
Read address
Read address
Read address
Read address
Read address
Read address
0000 (hex)
1555 (hex)
0AAA (hex)
1FFF (hex)
10F0 (hex)
0F0F (hex)
Valid READ
Valid READ
Valid READ
Valid READ
Valid READ
Initiate
STORE
cycle
The software sequence must be clocked with E
controlled
READ
s.
Once the sixth address in the sequence has been
entered, the
STORE
cycle will commence and the
chip will be disabled. It is important that
READ
cycles and not
WRITE
cycles be used in the
sequence, although it is not necessary that G be
low for the sequence to be valid. After the t
STORE
cycle time has been fulfilled, the
SRAM
will again be
activated for
READ
and
WRITE
operation.
SOFTWARE NONVOLATILE
RECALL
A software
RECALL
cycle is initiated with a
sequence of
READ
operations in a manner similar
to the software
STORE
initiation. To initiate the
RECALL
cycle, the following sequence of
READ
operations must be performed:
1.
2.
3.
4.
5.
6.
Read address
Read address
Read address
Read address
Read address
Read address
0000 (hex)
1555 (hex)
0AAA (hex)
1FFF (hex)
10F0 (hex)
0F0E (hex)
Valid READ
Valid READ
Valid READ
Valid READ
Valid READ
Initiate
RECALL
cycle
Internally,
RECALL
is a two-step procedure. First,
the
SRAM
data is cleared, and second, the nonvola-
tile information is transferred into the
SRAM
cells.
After the t
RECALL
cycle time the
SRAM
will once again
be ready for
READ
and
WRITE
operations. The
RECALL
operation in no way alters the data in the
EEPROM
cells. The nonvolatile data can be recalled
an unlimited number of times.
HARDWARE PROTECT
The STK16C68 offers hardware protection against
inadvertent
STORE
operation and
SRAM WRITE
s
during low-voltage conditions. When V
CC
< V
SWITCH
,
software
STORE
operations and
SRAM WRITE
s are
inhibited.
LOW AVERAGE ACTIVE POWER
The STK16C68 draws significantly less current
when it is cycled at times longer than 50ns. Figure 2
shows the relationship between I
CC
and
READ
cycle
time. Worst-case current consumption is shown for
both
CMOS
and
TTL
input levels (commercial tem-
perature range, V
CC
= 5.5V, 100% duty cycle on
chip enable). Figure 3 shows the same relationship
for
WRITE
cycles. If the chip enable duty cycle is
less than 100%, only standby current is drawn
when the chip is disabled. The overall average cur-
rent drawn by the STK16C68 depends on the fol-
lowing items: 1)
CMOS
vs.
TTL
input levels; 2) the
duty cycle of chip enable; 3) the overall cycle rate
for accesses; 4) the ratio of
READ
s to
WRITE
s; 5)
the operating temperature; 6) the V
CC
level; and 7) I/
O loading.
Figure 2: I
CC
(max) Reads
0
20
40
60
80
100
50
100
Cycle Time (ns)
150
200
TTL
CMOS
A
Figure 3: I
CC
(max) Writes
0
20
40
60
80
100
50
100
Cycle Time (ns)
150
200
TTL
CMOS
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STK16C88-WF25 | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStorePlus RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| STK16C88-WF25I | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStorePlus RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| STK16C88-WF25ITR | 制造商:Cypress Semiconductor 功能描述:STK16C88-WF25ITR - Tape and Reel |
| STK16C88-WF25TR | 制造商:Cypress Semiconductor 功能描述:STK16C88-WF25TR - Tape and Reel |
| STK16C88-WF45 | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStorePlus RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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