参数资料
型号: STM32F100C6T7BXXX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PQFP48
封装: 7 X 7 MM, ROHS COMPLIANT, LQFP-48
文件页数: 31/86页
文件大小: 1198K
代理商: STM32F100C6T7BXXX
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Doc ID 16455 Rev 3
5.3.4
Embedded reference voltage
The parameters given in Table 11 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
5.3.5
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 11: Current consumption
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
All I/O pins are in input mode with a static value at VDD or VSS (no load)
All peripherals are disabled except if it is explicitly mentioned
Prefetch in on (reminder: this bit must be set before clock setting and bus prescaling)
When the peripherals are enabled fPCLK1 = fHCLK/2, fPCLK2 = fHCLK
The parameters given in Table 12 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
Table 11.
Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C
1.16
1.20
1.26
V
–40 °C < TA < +85 °C
1.16
1.20
1.24
V
TS_vrefint
(1)
1.
Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when
reading the internal
reference voltage
5.1
17.1(2)
2.
Guaranteed by design, not tested in production.
s
VRERINT
Internal reference voltage
spread over the temperature
range
VDD = 3 V ±10 mV
10
mV
TCoeff
Temperature coefficient
100
ppm/°C
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