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| 型号： | STM32F100CBT7BTR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PQFP48 |
| 封装： | 7 X 7 MM, ROHS COMPLIANT, LQFP-48 |
| 文件页数： | 46/86页 |
| 文件大小： | 1198K |
| 代理商： | STM32F100CBT7BTR |
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Electrical characteristics
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Doc ID 16455 Rev 3
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 25 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
●
Stop or Standby mode: the clock source is the RC oscillator
●
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under the ambient temperature and VDD supply
voltage conditions summarized in Table 8.
Table 23.
HSI oscillator characteristics(1)
1.
VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
ACCHSI Accuracy of HSI oscillator
(2)
2.
Based on characterization, not tested in production.
TA = –40 to 105 °C
–2.7
3
%
TA = –10 to 85 °C
–2
2.5
%
TA = 0 to 70 °C
–2
2.5
%
TA = 25 °C
–0.7
1
%
tsu(HSI)
HSI oscillator startup time
1
2
s
IDD(HSI) HSI oscillator power consumption
80
100
A
Table 24.
LSI oscillator characteristics (1)
1.
VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
Frequency
30
40
60
kHz
tsu(LSI)
(2)
2.
Guaranteed by design, not tested in production.
LSI oscillator startup time
85
s
IDD(LSI)
LSI oscillator power consumption
0.65
1.2
A
Table 25.
Low-power mode wakeup timings
Symbol
Parameter
Typ
Unit
tWUSLEEP
(1)
Wakeup from Sleep mode
1.8
s
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