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| 型号： | STM32F100R4H6BTR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PBGA64 |
| 封装： | 5 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-64 |
| 文件页数： | 65/86页 |
| 文件大小： | 1198K |
| 代理商： | STM32F100R4H6BTR |
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Electrical characteristics
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Doc ID 16455 Rev 3
The above formula (Equation 1) is used to determine the maximum external impedance allowed for an
error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Note:
ADC accuracy vs. negative injection current: Injecting a negative current on any of the
standard (non-robust) analog input pins should be avoided as this significantly reduces the
accuracy of the conversion being performed on another analog input. It is recommended to
Table 42.
RAIN max for fADC = 12 MHz
(1)
1.
Guaranteed by design, not tested in production.
Ts (cycles)
tS (s)
RAIN max (k)
1.5
0.125
0.4
7.5
0.625
5.9
13.5
1.125
11.4
28.5
2.375
25.2
41.5
3.45
37.2
55.5
4.625
50
71.5
5.96
NA
239.5
20
NA
Table 43.
ADC accuracy - limited test conditions(1)(2)
1.
ADC DC accuracy values are measured after internal calibration.
2.
Based on characterization, not tested in production.
Symbol
Parameter
Test conditions
Typ
Max
Unit
ET
Total unadjusted error
fPCLK2 = 24 MHz,
fADC = 12 MHz, RAIN < 10 k,
VDDA = 3 V to 3.6 V
VREF+ = VDDA
TA = 25 °C
Measurements made after
ADC calibration
±1.5
±2.5
LSB
EO
Offset error
±1
±2
EG
Gain error
±0.5
±1.5
ED
Differential linearity error
±1.5
±2
EL
Integral linearity error
±1.5
±2
Table 44.
ADC accuracy(1) (2) (3)
1.
ADC DC accuracy values are measured after internal calibration.
2.
Better performance could be achieved in restricted VDD, frequency, VREF and temperature ranges.
3.
Based on characterization, not tested in production.
Symbol
Parameter
Test conditions
Typ
Max
Unit
ET
Total unadjusted error
fPCLK2 = 24 MHz,
fADC = 12 MHz, RAIN < 10 k,
VDDA = 2.4 V to 3.6 V
TA = Full operating range
Measurements made after
ADC calibration
±2
±5
LSB
EO
Offset error
±1.5
±2.5
EG
Gain error
±1.5
±3
ED
Differential linearity error
±1.5
±2.5
EL
Integral linearity error
±1.5
±4.5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM32F100R4H7B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
| STM32F100R4H7BTR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
| STM32F100R4T6B | 功能描述:ARM微控制器 - MCU 32BIT CORTEX M3 64PINS 16KB RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F100R4T6BTR | 功能描述:32位微控制器 - MCU 32B ARM Cortex-M3 Value line 16KB Flsh RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| STM32F100R4T7B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
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