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参数资料
| 型号： | STM32F101R6T6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP64 |
| 封装： | 10 X 10 MM, 0.50 MM PITCH, LQFP-64 |
| 文件页数： | 40/72页 |
| 文件大小： | 996K |
| 代理商： | STM32F101R6T6 |
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STM32F101xx
Electrical characteristics
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (Electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 1000-4-2 standard.
●
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 29. They are based on the EMS levels and classes
defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
Corrupted program counter
●
Unexpected reset
●
Critical Data corruption (control registers...)
Table 29.
EMS characteristics(1)
1.
TBD stands for to be determined.
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD = 3.3 V, LQFP100
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100pF on VDD and VSS pins
to induce a functional disturbance
VDD = 3.3 V, LQFP100
4A
相关PDF资料 |
PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM32F101R6T6A | 功能描述:ARM微控制器 - MCU 32BIT Cortex M3 L/D Access Line RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F101R6T6ATR | 功能描述:ARM微控制器 - MCU 32BIT Cortex M3 L/D Access Line RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F101R6T6AXXX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces |
| STM32F101R6T6TR | 制造商:STMicroelectronics 功能描述:LQFP 64 10X10X1.4 1, MICROCONTROLLER - Tape and Reel |
| STM32F101R6T6XXX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces |
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