参数资料
型号: STM32F101T4U6TR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, QCC36
封装: 6 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFQFPN-36
文件页数: 44/77页
文件大小: 1203K
代理商: STM32F101T4U6TR
STM32F101x4, STM32F101x6
Electrical characteristics
Doc ID 15058 Rev 4
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second. To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC61967-2 standard which specifies the test board and the pin loading.
Table 29.
EMS characteristics
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD 3.3 V, TA +25 °C,
fHCLK 36 MHz
conforms to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS pins
to induce a functional disturbance
VDD3.3 V, TA +25 °C,
fHCLK 36 MHz
conforms to IEC 61000-4-4
4A
Table 30.
EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/36 MHz
SEMI
Peak level
VDD 3.3 V, TA 25 °C,
LQFP100 package
compliant with
IEC 61967-2
0.1 MHz to 30 MHz
7
dBV
30 MHz to 130 MHz
8
130 MHz to 1GHz
13
SAE EMI Level
3.5
-
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STM32F101T4U6XXX 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
STM32F101T6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
STM32F101T6T6ATR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
STM32F101T6T6AXXX 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
STM32F101T6T6TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces