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参数资料
| 型号： | STM32F101VBT6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP100 |
| 封装： | 14 X 14 MM, 0.50 MM PITCH, LQFP-100 |
| 文件页数： | 41/72页 |
| 文件大小： | 996K |
| 代理商： | STM32F101VBT6 |
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Electrical characteristics
STM32F101xx
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second. To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE J
1752/3 standard which specifies the test board and the pin loading.
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size is
either 3 parts (cumulative mode) or 3 parts × (n + 1) supply pins (non-cumulative mode).
The human body model (HBM) can be simulated. The tests are compliant with JESD22-
A114A standard.
For more details, refer to the application note AN1181.
Table 30.
EMI characteristics(1)
1.
TBD stands for to be determined.
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fHCLK]
Unit
8/36 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 2 5°C,
LQFP100 package compliant
with SAE J 1752/3
0.1 MHz to 30 MHz
7
dBV
30 MHz to 130 MHz
8
130 MHz to 1GHz
13
SAE EMI Level
3.5
-
Table 31.
ESD absolute maximum ratings(1)
1.
TBD stands for to be determined.
Symbol
Ratings
Conditions
Maximum value(2)
2.
Values based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage (human
body model)
TA = +25 °C
2000
V
VESD(CDM)
Electrostatic discharge voltage (charge
device model)
500
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM32F101VBT6TR | 功能描述:ARM微控制器 - MCU 32BIT Cortex M3 Medium-density RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F101VBT6XXX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces |
| STM32F101VBU6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces |
| STM32F101VBU6XXX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces |
| STM32F101VC | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High-density access line, ARM-based 32-bit MCU with 256 to 512 KB Flash, 9 timers, 1 ADC and 10 communication interfaces |
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