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参数资料
| 型号： | STM32F103VCT7XXX |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP100 |
| 封装： | 14 X 14 MM, 0.50 MM PITCH, ROHS COMPLIANT, LQFP-100 |
| 文件页数： | 102/122页 |
| 文件大小： | 1599K |
| 代理商： | STM32F103VCT7XXX |
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Electrical characteristics
STM32F103xC, STM32F103xD, STM32F103xE
Doc ID 14611 Rev 6
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE J
1752/3 standard which specifies the test board and the pin loading.
5.3.12
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 42.
EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/48 MHz 8/72 MHz
SEMI
Peak level
VDD 3.3 V, TA 25 °C,
LQFP144 package
compliant with SAE J
1752/3
0.1 to 30 MHz
8
12
dBV
30 to 130 MHz
31
21
130 MHz to 1GHz
28
33
SAE EMI Level
4
-
Table 43.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class Maximum value(1)
1.
Based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA +25 °C, conforming
to JESD22-A114
22000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device model)
TA +25 °C, conforming
to JESD22-C101
II
500
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM32F103VCY6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces |
| STM32F103VCY6XXX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces |
| STM32F103VCY7TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces |
| STM32F103VCY7XXX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces |
| STM32F103VD | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces |
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