参数资料
型号: STM32F107VBH6TR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, BGA100
封装: ROHS COMPLIANT, LFBGA-100
文件页数: 49/90页
文件大小: 998K
代理商: STM32F107VBH6TR
STM32F105xx, STM32F107xx
Electrical characteristics
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 32.
EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/48 MHz 8/72 MHz
SEMI
Peak level
VDD = 3.3 V, TA = 25 °C,
LQFP100 package
compliant with SAE J
1752/3
0.1 to 30 MHz
12
dBV
30 to 130 MHz
22
19
130 MHz to 1GHz
23
29
SAE EMI Level
4
-
Table 33.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum value(1)
1.
Based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C
conforming to
JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C
conforming to
JESD22-C101
II
500
Table 34.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +105 °C conforming to JESD78A
II level A
相关PDF资料
PDF描述
STM32F107VBH7TR 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, BGA100
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