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| 型号： | STM32L152C8T6D |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 32 MHz, RISC MICROCONTROLLER, PQFP48 |
| 封装： | 7 X 7 MM, 0.50 MM PITCH, ROHS COMPLIANT, LQFP-48 |
| 文件页数： | 73/106页 |
| 文件大小： | 1417K |
| 代理商： | STM32L152C8T6D |
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STM32L151xx, STM32L152xx
Electrical characteristics
Doc ID 17659 Rev 1
6.3.9
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
●
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 33. They are based on the EMS levels and classes
defined in application note AN1709.
Table 32.
Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ
Max
NCYC
Erase / write cycles
(program memory)
See notes(2)
2.
Retention guaranteed after cycling is 10 years @ 55*°C
TBD
kcycles
Erase / write cycles (data memory)
See notes(3)
3.
Retention guaranteed after cycling is 1 year @ 55*°C
TBD
tRET
Data retention (program memory)
after 10 kcycles at TA = 85 °C
TRET = +55 °C
TBD
Years
Data retention (data memory) after 10
kcycles at TA = 85 °C
TRET = +55 °C
TBD
Data retention (program memory)
after 10 kcycles at TA = 85 °C
TRET = +85 °C
TBD
Table 33.
EMS characteristics
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD = 3.3 V, LQFP100, TA = +25 °C,
fHCLK = 32 MHz
conforms to IEC 61000-4-2
TBD
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, LQFP100, TA = +25 °C,
fHCLK = 32 MHz
conforms to IEC 61000-4-4
TBD
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| STM32L152C8U6 | 功能描述:ARM微控制器 - MCU 32-Bit Arm Cortex M3 64kb LCD Ultralow RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
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| STM32L152CBU6 | 功能描述:ARM微控制器 - MCU 32-Bit Arm Cortex M3 128kb LCD Ultralow RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
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