参数资料
型号: STM32L152CBU6TR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 32 MHz, RISC MICROCONTROLLER, QCC48
封装: 7 X 7 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFQFPN-48
文件页数: 76/106页
文件大小: 1417K
代理商: STM32L152CBU6TR
STM32L151xx, STM32L152xx
Electrical characteristics
Doc ID 17659 Rev 1
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
6.3.11
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 37 are derived from tests
performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL
compliant.
Table 35.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class Maximum value(1)
1.
Based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C, conforming
to JESD22-A114
2TBD
V
VESD(CDM)
Electrostatic discharge
voltage (charge device model)
TA = +25 °C, conforming
to JESD22-C101
II
TBD
Table 36.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +105 °C conforming to JESD78A
TBD
Table 37.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
TTL ports
2.7 V
VDD3.6 V
VSS - 0.3
0.8
V
VIH
Standard I/O input high level voltage
2
VDD+0.3
FT(1) I/O input high level voltage
2
5.5V
VIL
Input low level voltage
CMOS ports
1.65 V
VDD3.6 V
–0.3
0.3 VDD
VIH
Standard I/O Input high level voltage
0.7 VDD
(2)
VDD+0.3
FT(3) I/O input high level voltage
CMOS ports
1.65 V
VDD2.0 V
5.25
CMOS ports
2.0 V
VDD3.6 V
5.5
Vhys
Standard I/O Schmitt trigger voltage
hysteresis(4)
10% VDD
(5)
Ilkg
Input leakage current (6)
VSS VIN VDD
Standard I/Os
± 50
nA
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