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| 型号： | STM8L101G2U3ATR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, QCC28 |
| 封装： | 4 X 4 MM, ROHS COMPLIANT, UFQFPN-28 |
| 文件页数： | 58/79页 |
| 文件大小： | 1942K |
| 代理商： | STM8L101G2U3ATR |
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STM8L101xx
Electrical parameters
Doc ID 15275 Rev 8
9.3.9
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000-4-2
standard.
●
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 34.
EMS data
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
LQFP32, VDD = 3.3 V
3B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
LQFP32, VDD = 3.3 V, fHSI
3B
LQFP32, VDD = 3.3 V, fHSI/2
4A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM8L101G2U3TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C |
| STM8L101G2U6 | 功能描述:8位微控制器 -MCU 8-Bit UL PWR MCU 4Kbytes -40 to 85 RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| STM8L101G2U6A | 功能描述:8位微控制器 -MCU 8-Bit UL PWR MCU 4Kbytes -40 to 85 RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| STM8L101G2U6ATR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C |
| STM8L101G2U6TR | 功能描述:8位微控制器 -MCU 8-Bit Ultralow MCU 28-Pin 4KBIT RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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