参数资料
型号: STM8L101G3U3ATR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, QCC28
封装: 4 X 4 MM, ROHS COMPLIANT, UFQFPN-28
文件页数: 41/81页
文件大小: 1995K
代理商: STM8L101G3U3ATR
Electrical parameters
STM8L101xx
Doc ID 15275 Rev 11
9.3.4
Clock and timing characteristics
Internal clock sources
Subject to general operating conditions for VDD and TA.
High speed internal RC oscillator (HSI)
Figure 16.
Typical HSI frequency vs. VDD
Table 22.
HSI oscillator characteristics (1)
1.
VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.0 V
-
16
-
MHz
ACCHSI
Accuracy of HSI
oscillator
(factory calibrated)
VDD = 3.0 V, TA = 25 °C
-1
1
%
VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C
-2.5
2
%
VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C
-4.5
2
%
VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C
-1.5(2)
2.
Data based on characterization results, not tested in production.
1.5(2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C
-2(2)
%
1.65 V
≤ VDD ≤ 3.6 V,
-40 °C
≤ TA ≤125 °C
-4.5(2)
%
IDD(HSI)
HSI oscillator power
consumption
-
70
100(2)
A
ai17013
15
15.2
15.4
15.6
15.8
16
16.2
16.4
16.6
16.8
17
1.65 1.8 1.95 2.1 2.25 2.4 2.55 2.7 2.85
3
3.15 3.3 3.45 3.6
V
DD [V]
H
S
If
requenc
y
[
M
H
z
]
-40°C
25°C
85°C
125°C
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