参数资料
型号: STM8L101K3T6
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQFP32
封装: 7 X 7 MM, ROHS COMPLIANT, LQFP-32
文件页数: 44/81页
文件大小: 1995K
代理商: STM8L101K3T6
STM8L101xx
Electrical parameters
Doc ID 15275 Rev 11
9.3.5
Memory characteristics
TA = -40 to 125 °C unless otherwise specified.
Table 24.
RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode (1)
1.
Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Flash memory
Halt mode (or Reset)
1.4
-
V
Table 25.
Flash program memory
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fMASTER = 16 MHz
1.65
-
3.6
V
tprog
Programming time for 1- or 64-byte (block)
erase/write cycles (on programmed byte)
-6
-
ms
Programming time for 1- to 64-byte (block)
write cycles (on erased byte)
-3
-
ms
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
-
0.7
-
mA
TA=+25 °C, VDD = 1.8 V
-
tRET
Data retention (program memory)
after 10k erase/write cycles
at TA = +85 °C
TRET = 55 °C
20(1)
--
years
Data retention (data memory)
after 10k erase/write cycles
at TA = +85 °C
TRET = 55 °C
20(1)
--
Data retention (data memory)
after 300k erase/write cycles
at TA = +125 °C
TRET = 85 °C
--
NRW
Erase/write cycles (program memory)
See notes (1)(2)
10(1)
--
kcycles
Erase/write cycles (data memory)
See notes (1)(3)
--
1.
Data based on characterization results, not tested in production.
2.
Retention guaranteed after cycling is 10 years at 55 °C.
3.
Retention guaranteed after cycling is 1 year at 55 °C.
4.
Data based on characterization performed on the whole data memory (2 Kbytes).
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