参数资料
型号: STM8L101K3T6ATR
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQFP32
封装: 7 X 7 MM, ROHS COMPLIANT, LQFP-32
文件页数: 59/79页
文件大小: 1942K
代理商: STM8L101K3T6ATR
Electrical parameters
STM8L101xx
Doc ID 15275 Rev 8
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: Human Body Model. This test conforms to the JESD22-A114A/A115A
standard.
Table 35.
EMI data (1)
1.
Not tested in production.
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
Unit
16 MHz
SEMI
Peak level
VDD = 3.6 V,
TA = +25 °C,
LQFP32
conforming to
IEC61967-2
0.1 MHz to 30 MHz
-3
dB
μV
30 MHz to 130 MHz
-6
130 MHz to 1 GHz
-5
SAE EMI Level
1
-
Table 36.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value (1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
1000
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