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参数资料
| 型号： | STM8L151M8T6STM8L151M8T6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQFP80 |
| 封装： | 14 X 14 MM, ROHS COMPLIANT, LQFP-80 |
| 文件页数： | 16/122页 |
| 文件大小： | 1190K |
| 代理商： | STM8L151M8T6STM8L151M8T6 |
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Electrical parameters
STM8L15xx8, STM8L15xR6
112/122
Doc ID 17943 Rev 1
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000 standard.
●
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm IEC61967-2 which specifies the board and the loading of each pin.
Table 55.
EMS data
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on
any I/O pin to induce a functional
disturbance
VDD = 3.3 V, TA = +25 °C,
fCPU= 16 MHz,
conforms to IEC 61000
TBD
VEFTB
Fast transient voltage burst limits
to be applied through 100 pF on
VDD and VSS pins to induce a
functional disturbance
VDD = 3.3 V, TA = +25 °C,
fCPU = 16 MHz,
conforms to IEC 61000
Using HSI
TBD
Using HSE
TBD
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM8L151M8T6TR | 功能描述:8位微控制器 -MCU 8-bit Ultralow MCU 80 pin 64kb Flash RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| STM8L151R6T6 | 功能描述:8位微控制器 -MCU STM8L Ultra LP 8-Bit LCD 64-Pin 32kB RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| STM8L151R8T6 | 功能描述:8位微控制器 -MCU STM8L Ultra LP 8-Bit LCD 64-Pin 64kB RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| STM8L151R8T6TR | 功能描述:8位微控制器 -MCU STM8L Ultra LP 8-Bit LCD 64-Pin 64kB RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| STM8L151XX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators |
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