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参数资料
| 型号： | STPF860D |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 134K |
| 代理商： | STPF860D |
STPF860D
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE – 600Volts
FORWARD CURRENT – 8.0 Ampere
FEATURES
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Soft recovery characteristic
MECHANICAL DATA
Case: ITO-220AC
Case Material: Plastic material, UL flammability
classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Lead Free Plating
Polarity indicator: As marked on the body
Weight: 1.70 grams
Component in accordance to RoHs 2002/95/EC
ESD capability : HBM_8KV (JESD22-A114)
Maximum mounting torque = 0.5 N.m (5.1 Kgf.cm)
ITO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
STPF860D
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
600
V
Maximum RMS Voltage
VRMS
420
A
Maximum DC Blocking Voltage
VDC
600
V
Maximum Average Forward Rectified Current
TC=90°C
I(AV)
8
A
Peak Forward Surge Current 8.3ms single half sine-wave
IFSM
90
A
Maximum Forward Voltage @IF=8A
Tj=25°C
Tj=125°C
VF
1.5
1.4
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Tj=25°C
Tj=125°C
IR
10
1000
uA
Reverse recovery time
IF= 0.5A
Irr= 0.25A
IR =1.0A
Tj=25°C
trr
50
ns
Typical Junction Capacitance (Note 1)
CJ
50
P F
Operation and Storage temperature range
TJ, TSTG
-55 to +150
°C
Typical thermal resistance_Junction to Case (2)
RΘJC
5
°C/W
Typical thermal resistance_Junction to Lead (2)
RΘJL
4
°C/W
Note :
REV. 1, Sep-2010, KTGA26
(1)
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(2)
Thermal Resistance test performed in accordance with JESD-51. Rthj-L is measured at the PIN 2,
Rthj-C is measured at the top centre of body.
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