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参数资料
| 型号： | STPIC6C595M |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 计数移位寄存器 |
| 英文描述： | 8-BIT RIGHT SERIAL IN PARALLEL OUT SHIFT REGISTER, TRUE OUTPUT, PDSO16 |
| 封装： | SO-16 |
| 文件页数： | 12/17页 |
| 文件大小： | 370K |
| 代理商： | STPIC6C595M |
STPIC6C595
4/17
Table 4: DC Characteristics (VCC=5V, TC= 25°C, unless otherwise specified.)
Table 5: Switching Characteristics (VCC=5V, TC= 25°C, unless otherwise specified.)
Note 1: All Voltage value are with respect to GND
Note 2: Each power DMOS source is internally connected to GND
Note 3: Pulse duration
≤ 100s and duty cycle ≤ 2%
Note 4: Drain Supply Voltage = 15V, starting junction temperature (TJS) = 25°C. L = 1.5H and IAS = 200mA (See Fig. 11 and 12)
Note 5: Technique should limit TJ - TC to 10°C maximum
Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts.
Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a volt-
age drop of 0.5V at TC = 85°C.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSX Drain-to-Source breakdown
Voltage
ID = 1mA
33
37
V
VSD
Source-to-Drain Diode
Forward Voltage
IF = 100 mA
0.85
1.2
V
VOH
High Level Output Voltage
SER OUT
IOH = -20 AVCC = 4.5V
4.4
4.49
V
IOH = -4 mA
VCC = 4.5V
4
4.2
V
VOL
Low Level Output Voltage
SER OUT
IOH = 20 AVCC = 4.5V
0.005
0.1
V
IOH = 4 mA
VCC = 4.5V
0.3
0.5
V
IIH
High Level Input Current
VCC = 5.5V
VI = VCC
1
A
IIL
Low Level Input Current
VCC = 5.5V
VI = 0
-1
A
ICC
Logic Supply Current
VCC = 5.5V All outputs OFF or ON
20
200
A
ICC(FRQ) Logic Supply Current at
Frequency
fSRCK = 5MHz
CL = 30pF
All outputs OFF
(See Figg. 6, 18 and 19)
0.2
2
mA
IN
Nominal Current
VDS(on) = 0.5V
IN = ID
TC=85°C
(See Note 5, 6, 7)
90
mA
IDSX
Off-State Drain Current
VDS = 30V
VCC = 5.5V
0.3
5
A
VDS = 30V
VCC =5.5V or
0V
TC=125°C
0.6
8
A
RDS(on)
Static Drain Source ON
State Resistance (See Note
5, 6 and figg. 14, 16)
ID = 50mA
VCC = 4.5V
4.5
6
ID = 50mA
VCC = 4.5V
TC=125°C
6.5
9
ID = 100mA
VCC = 4.5V
4.5
6
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tPHL
Propagation Delay Time,
High to Low Level Output
from G
CL = 30pF ID = 75mA
(See Figg. 4, 5, 6,7, 20)
80
ns
tPLH
Propagation Delay Time,
Low to High Level Output
from G
130
ns
tr
Rise Time, Drain Output
60
ns
tf
Fall Time, Drain Output
50
ns
tpd
propagation Delay Time
20
ns
ta
Reverse Recovery Current
Rise Time
IF = 100mA
di/dt = 10A/
s
(See Note 5, 6 and Fig. 9 and 10)
39
ns
trr
Reverse Recovery Time
115
ns
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