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参数资料
| 型号： | STPR2010CT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | STPR2010CT |
STPR2010CT thru 2060CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 100 to 600 Volts
FORWARD CURRENT - 20 Amperes
SEMICONDUCTOR
LITE-ON
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR 0.25A.
3.Thermal Resistance Junction to Case.
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current
@TC
=95℃
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at
Pulse width =300us
2% Duty cycle
20
125
℃
TJ,TSTG
Operating and Storage Temperature Range
-55 to +150
Typical Thermal Resistance (Note 3)
Rθ JC
1.5
/W
℃
CJ
Typical Junction Capacitance
per element (Note 1)
100
pF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =100℃
@TJ =25℃
IR
10
500
uA
VF
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Maximum Reverse Recovery Time (Note 2)
TRR
ns
IF=10A@TJ =25℃
IF=10A@TJ =125℃
IF=20A@TJ =25℃
IF=20A@TJ =125℃
REV.2, Sep-2010, KTGC13
STPR
2010CT
140
300
210
400
280
500
350
600
420
200
300
400
500
600
200
STPR
2020CT
STPR
2030CT
STPR
2040CT
STPR
2050CT
STPR
2060CT
70
100
1.3
1.2
1.5
1.4
1.5
1.4
1.7
1.6
1.1
1.0
1.25
1.20
35
50
30
相关PDF资料 |
PDF描述 |
|---|---|
| STPR2030CT | 10 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB |
| STPR2050CT | 10 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AB |
| STPR620CT | 6 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| STPS0520Z | 0.5 A, 20 V, SILICON, SIGNAL DIODE |
| STPS1045CS1 | 10 A, 45 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STPR2020CT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Ultra Fast Recovery Diodes |
| STPR2420 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:ULTRA-FAST RECOVERY RECTIFIER DIODES |
| STPR2420CT | 功能描述:整流器 2X12 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| STPR310D | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:ULTRA FAST RECOVERY RECTIFIER DIODES |
| STPR310F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:ULTRA FAST RECOVERY RECTIFIER DIODES |
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