- 您现在的位置：买卖IC网 > PDF目录54492 > STPR650D (LITE-ON ELECTRONICS INC) 6 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC PDF资料下载
参数资料
| 型号： | STPR650D |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 73K |
| 代理商： | STPR650D |
STPR610D thru STPR660D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Power Factor Correction function.
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR=0.25A.
3. Thermal Resistance Junction to case.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
Maximum Average Forward
Rectified Current
@TC
=100 C
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage at 6.0A
DC
C
TJ ,TSTG
Operating and Storage Temperature Range
-55 to +150
Typical Thermal Resistance (Note 3)
R0JC
3.0
C/W
CJ
Typical Junction
Capacitance (Note 1)
60
pF
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Maximum Reverse Recovery Time (Note 2)
TRR
ns
60
Peak Forward Surge Current
8.3ms single half-sine-wave
superimposed on rated load
TO-220AC
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2
CASE
PIN
1
2
POWER FACTOR CORRECTION
RECTIFIERS (PFC DIODE)
REVERSE VOLTAGE - 100 to 600 Volts
FORWARD CURRENT- 6.0 Amperes
SEMICONDUCTOR
LITE-ON
@TJ =125 C
@TJ =25 C
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 C
@TJ =25 C
500
uA
10
REV. 1, Aug-2007, KTGA13
6
STPR
610D
140
300
210
400
280
500
350
600
420
200
300
400
500
600
200
STPR
620D
STPR
630D
STPR
640D
STPR
650D
STPR
660D
70
100
1.3
1.2
1.5
1.4
1.1
1.0
35
50
30
All Dimensions in millimeter
TO-220AC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
5.33
N
M
L
K
J
I
1.14
4.83
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
相关PDF资料 |
PDF描述 |
|---|---|
| STPR610D | 6 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| STPR640D | 6 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC |
| STPR820DF | 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| STPR805DF | 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| STPRA1640CT | 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STPR805DB | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| STPR805DF | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Ultra Fast Recovery Diodes |
| STPR806D | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Ultra Fast Recovery Diodes |
| STPR810D | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| STPR810DB | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:Ultra Fast Recovery Diodes |
发布紧急采购，3分钟左右您将得到回复。