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参数资料
| 型号： | STPS10L40CFP |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, TO-220FPAB, 3 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 136K |
| 代理商： | STPS10L40CFP |
Characteristics
STPS10L40C
2/9
1
Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
th(j-c)(Per diode) + P(diode 2) x Rth(c).
To evaluate the conduction losses use the following equation:
P = 0.33 x IF(AV) + 0.026 IF
2
(RMS)
Table 1.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
40
V
IF(RMS)
RMS forward voltage
20
A
IF(AV)
Average forward
current
TO-220AB
D2PAK
Tc =135° C
δ = 0.5
Per diode
Per device
5
10
A
TO-220FPAB
Tc = 140° C
δ = 0.5
Per diode
Per device
5
10
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
150
A
IRRM
Repetitive peak reverse current
tp = 2 s square F = 1 kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 s square
2
A
PARM
Repetitive peak avalanche power
tp = 1 s Tj = 25°C
2700
W
Tstg
Storage temperature range
-65 to + 150
° C
Tj
Maximum operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
150
° C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
Table 2.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB / D2PAK
Per diode
Total
3
1.7
°C/W
Rth (c)
Coupling
0.35
Rth(j-c)
Junction to case
TO-220FPAB
Per diode
Total
5
3.8
°C/W
Rth (c)
Coupling
2.5
Table 3.
Static electrical characteristics (per diode)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 380 s,
δ < 2%
Reverse leakage current
Tj = 25° C
VR = VRRM
0.2
mA
Tj = 100° C
8
25
mA
VF
Forward voltage drop
Tj = 25° C
IF = 5 A
0.53
V
Tj = 100° C
IF = 5 A
0.36
0.46
Tj = 25° C
IF = 10 A
0.67
Tj = 125° C
IF = 10 A
0.49
0.59
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
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