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参数资料
| 型号： | STPS30120CT |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 111K |
| 代理商： | STPS30120CT |
Characteristics
STPS30120C
2/8
Doc ID 11213 Rev 3
1
Characteristics
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
120
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward
current
δ = 0.5
Tc = 145 °C
Per diode
Per device
15
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
PARM
Repetitive peak avalanche power
tp = 1 s Tj = 25 °C
6700
W
VARM
(1)
1.
Refer to Figure 11
Maximum repetitive
peak avalanche voltage
tp = 1 s, Tj < 150 °C, IAR < 13.4 A
150
V
VASM
Maximum single pulse
peak avalanche voltage
tp = 1 s, Tj < 150 °C, IAR < 13.4 A
150
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(2)
2.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
Total
2.2
1.3
°C/W
Rth(c)
Coupling
Total
0.3
°C/W
dPtot
dTj
<
1
Rth(j-a)
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相关代理商/技术参数 |
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