参数资料
型号: STPS30M100SR
厂商: STMICROELECTRONICS
元件分类: 整流器
英文描述: 30 A, 100 V, SILICON, RECTIFIER DIODE
封装: ROHS COMPLIANT, PLASTIC, I2PAK-3
文件页数: 3/10页
文件大小: 133K
代理商: STPS30M100SR
Characteristics
STPS30M100S
2/10
Doc ID 15523 Rev 2
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward rms current
60
A
IF(AV)
Average forward current
δ = 0.5
Tc = 125 °C
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
300
A
PARM
Repetitive peak avalanche power
tp = 1 s Tj = 25 °C
26400
W
VARM
(1)
1.
Refer to Figure 14.
Maximum repetitive peak avalanche
voltage
tp < 1 s Tj < 150 °C
IAR < 66 A
120
V
VASM
Maximum single pulse peak avalanche
voltage
tp < 1 s Tj < 150 °C
IAR < 66 A
120
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (2)
2.
condition to avoid thermal runaway for a diode on its own heatsink
150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB, I2PAK
1
°C/W
TO-220FPAB
4
Table 4.
Static electrical characteristics with all leads connected on board
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
175
A
Tj = 125 °C
-
20
50
mA
Tj = 25 °C
VR = 70 V
-
60
A
Tj = 125 °C
-
10
20
mA
VF
(2)
2.
Pulse test: tp = 380 s, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 5 A
-
0.475
-
V
Tj = 125 °C
-
0.385
-
Tj = 25 °C
IF = 10 A
-
0.555
-
Tj = 125 °C
-
0.475
--
Tj = 25 °C
IF = 15 A
-
0.620
0.660
Tj = 125 °C
-
0.525
0.565
Tj = 25 °C
IF = 30 A
-
0.740
0.800
Tj = 125 °C
-
0.605
0.655
dPtot
dTj
---------------
1
Rth j
a
()
--------------------------
<
相关PDF资料
PDF描述
STPS30M100SFP 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
STPS3H100UF 3 A, 100 V, SILICON, RECTIFIER DIODE
STPS3H100U 3 A, 100 V, SILICON, RECTIFIER DIODE
STPS40120CT 20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
STPS40170CT 20 A, 170 V, SILICON, RECTIFIER DIODE, TO-220AB
相关代理商/技术参数
参数描述
STPS30M100ST 功能描述:肖特基二极管与整流器 100V 30A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
STPS30M100STN 制造商:STMicroelectronics 功能描述: 制造商:STMicroelectronics 功能描述:DIODE SCHOTTKY 30A 100V TO-220FP 制造商:STMicroelectronics 功能描述:DIODE, SCHOTTKY, 30A, 100V ,TO-220FP 制造商:STMicroelectronics 功能描述:DIODE, SCHOTTKY, 30A, 100V ,TO-220FP, Diode Type:Schottky, Diode Configuration:S 制造商:STMicroelectronics 功能描述:DIODE, SCHOTTKY, 30A, 100V ,TO-220FP, Diode Type:Schottky, Diode Configuration:Single, Repetitive Reverse Voltage Vrrm Max:100V, Forward Current If(AV):30A, Forward Voltage VF Max:800mV, Forward Surge Current Ifsm Max:300A, Operating
STPS30M120S 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power Schottky rectifier
STPS30M120SR 功能描述:肖特基二极管与整流器 30A IF 120V VRRM 0.47V VF Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
STPS30M120STN 功能描述:肖特基二极管与整流器 30A IF 120V VRRM 0.45V VF Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel