- 您现在的位置：买卖IC网 > PDF目录62721 > STPS40100C2FSYHR (STMICROELECTRONICS) 100 V, SILICON, RECTIFIER DIODE, TO-254AA PDF资料下载
参数资料
| 型号： | STPS40100C2FSYHR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 100 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, TO-254, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 76K |
| 代理商： | STPS40100C2FSYHR |
STPS40100HR
Characteristics
Doc ID 17306 Rev 1
3/9
s
Table 4.
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C
Symbol
Characteristic
MIL-STD-750
test method
Test conditions
Values
Units
Min.
Max.
IR1
Reverse current
4016
DC method, VR = 100 V
-
30
A
IR2
DC method, VR = 50 V
-
5
A
V
F1
(1)
Forward voltage
4011
Pulse method, IF = 5 A
-
610
mV
VF2(1)
Pulse method, IF = 10 A
-
730
mV
VF3(1)
Pulse method, IF = 20 A
-
900
mV
C
Capacitance
4001
VR = 10 V, F = 1 MHz
-
1
nF
Zth(j-c)
(2)
Relative thermal impedance,
junction to case
3101
IH = 15 to 40 A, tH = 50 ms
IM = 50 mA, tmd = 100 s
Calculate
ΔVF(3) °C/W
1.
Pulse width
≤ 300s, duty cycle ≤ 2%
2.
Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
3.
The limits for
ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5.
Electrical measurements at high and low temperatures (per diode)
Symbol
Characteristic
MIL-STD-750
test method
Test conditions(1)
Values
Units
Min.
Max.
IR1
Reverse current
4016
Tcase = +125 (+0, -5) °C
DC method, VR = 100 V
-20
mA
IR2
Tcase = +125 (+0, -5) °C
DC method, VR = 50 V
-7.5
mA
VF2
(2)
Forward voltage
4011
Tcase = +125 (+0, -5) °C
pulse method, IF = 10 A
-660
mV
VF3(2)
Tcase = +125 (+0, -5) °C
pulse method, IF = 20 A
-850
mV
Tcase = -55 (+5, -0) °C
pulse method, IF = 20 A
-950
mV
1.
Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2.
Pulse width
≤ 300s, duty cycle ≤ 2%
相关PDF资料 |
PDF描述 |
|---|---|
| STPS4045CP | 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-218AC |
| STPS5L60 | 5 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
| STTB806DI | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| STTH106 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 |
| STTH1502DI | 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STPS40100CT | 功能描述:DIODE SCHOTTKY 100V2X20A RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| STPS40100HR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Aerospace 2 x 20 A - 100 V Schottky rectifier |
| STPS40120C | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power Schottky rectifier |
| STPS40120C_11 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power Schottky rectifier |
| STPS40120CR | 功能描述:肖特基二极管与整流器 POWER SCHOTTKY RECT RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。