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参数资料
| 型号： | STPS40SM100CR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, I2PAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 121K |
| 代理商： | STPS40SM100CR |
Characteristics
STPS40SM100C
2/9
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.580 x IF(AV) + 0.0043 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward current rms
60
A
IF(AV)
Average forward current
δ = 0.5
Tc = 130 °C
Per diode
20
A
Tc = 125 °C
Per device
40
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
530
A
PARM
(1)
Repetitive peak avalanche power
tp = 1 s Tj = 25 °C
18000
W
VARM
(2)
Maximum repetitive peak avalanche voltage
tp < 1 s Tj < 150 °C
IAR < 45 A
120
V
VASM
Maximum single pulse peak avalanche voltage
tp < 1 s Tj < 150 °C
IAR < 45 A
120
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (3)
150
°C
1.
For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2.
Refer to Figure 11.
3.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
<
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
Total
1.3
0.7
°C/W
Rth(c)
Coupling
0.1
Table 4.
Static electrical characteristics (per diode, at 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = 70 V
7A
Tj = 125 °C
7
mA
Tj = 25 °C
VR = 100 V
13
45
A
Tj = 125 °C
13
45
mA
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
520
mV
Tj = 125 °C
435
Tj = 25 °C
IF = 10A
620
700
Tj = 125 °C
520
580
Tj = 25 °C
IF = 20 A
740
810
Tj = 125 °C
605
665
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 s, δ < 2%
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相关代理商/技术参数 |
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|---|---|
| STPS40SM100CT | 功能描述:肖特基二极管与整流器 2X20A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| STPS40SM100CTN | 制造商:STMicroelectronics 功能描述: 制造商:STMicroelectronics 功能描述:DIODE SCHOTTKY 2X20A 100V TO-220AB 制造商:STMicroelectronics 功能描述:DIODE, SCHOTTKY, 2X20A, 100V ,TO-220AB, Diode Type:Schottky, Diode Configuration:Dual Common Cathode, Repetitive Reverse Voltage Vrrm Max:100V, Forward Current If(AV):40A, Forward Voltage VF Max:810mV, Forward Surge Current Ifsm |
| STPS40SM120C | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power Schottky rectifier |
| STPS40SM120CR | 功能描述:肖特基二极管与整流器 40A IF 120V VRRM 0.46V VF Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| STPS40SM120CT | 功能描述:肖特基二极管与整流器 40A IF 120V VRRM 0.46V VF Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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