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参数资料
| 型号： | STR711FR0T3 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 66 MHz, RISC MICROCONTROLLER, PQFP64 |
| 封装： | 10 X 10 MM, LQFP-64 |
| 文件页数： | 42/78页 |
| 文件大小： | 2018K |
| 代理商： | STR711FR0T3 |
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STR71xF
Electrical parameters
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4.3.4
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electro magnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
●
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
●
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
●
Corrupted program counter
●
Unexpected reset
●
Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
In the case of an ARM7 CPU, in order to write robust code that can withstand all kinds of
stress, such as very strong electromagnetic disturbance, it is mandatory that the Data Abort,
Prefetch Abort and Undefined Instruction exceptions are managed by the application
software. This will prevent the code going into an undefined state or performing any
unexpected operation.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STR711FR0T6 | 功能描述:ARM微控制器 - MCU TQFP 64 10x10x1.4 1 RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STR711FR0XX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:ARM7TDMI⑩ 32-bit MCU with Flash, USB, CAN 5 timers, ADC, 10 communications interfaces |
| STR711FR1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:ARM7TDMI⑩ 32-bit MCU with Flash, USB, CAN 5 timers, ADC, 10 communications interfaces |
| STR711FR1H6 | 功能描述:ARM微控制器 - MCU MCU 256KB STR71x ARM7TDMI RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STR711FR1T6 | 功能描述:ARM微控制器 - MCU 128K Flash 16K RAM RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
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