参数资料
型号: STTA2006PI
厂商: STMICROELECTRONICS
元件分类: 参考电压二极管
英文描述: 20 A, 600 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, DOP3I, 2 PIN
文件页数: 3/8页
文件大小: 265K
代理商: STTA2006PI
Obsolete
Product(s)
- Obsolete
Product(s)
STTA2006P/PI
3/8
P1(W)
02468
10
12
14
16
18
20
0
10
20
30
40
50
=0.2
=0 . 5
=1
IF(av)(A)
T
=tp/T
tp
=0.1
Fig. 1: Conduction losses versus average current.
VFM(V)
0.1
1
10
100 200
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
MAXIMUM VALUES
IFM(A)
Tj=125 C
o
Fig. 2: Forward voltage drop versus forward
current.
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
IRM(A)
0
100 200 300 400 500 600 700 800 900 1000
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
35.0
37.5
40.0
VR=400V
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
IF=20A
IF=10A
IF=40A
Fig. 4: Peak reverse recovery current versus
dIF/dt.
trr(ns)
0
100 200 300 400 500 600 700 800 900 1000
0
25
50
75
100
125
150
175
200
225
250
VR=400V
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
IF=20A
IF=10A
IF=40A
Fig. 5: Reverse recovery time versus dIF/dt.
Sfactor
0
100 200 300 400 500 600 700 800 900 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
dIF/dt(A/ s)
VR=400V
IF<2xIF(av)
Typical values Tj=125 C
o
Fig. 6: Softness factor (tb/ta) versus dIF/dt.
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