参数资料
型号: STTH302S
厂商: STMICROELECTRONICS
元件分类: 整流器
英文描述: 3 A, 200 V, SILICON, RECTIFIER DIODE
封装: SMC, 2 PIN
文件页数: 3/5页
文件大小: 57K
代理商: STTH302S
STTH302S
3/5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
(A)
F(AV)
P
(W)
F(AV)
T
δ=tp/T
tp
δ = 0.05 δ
= 0.1
δ = 0.2
δ = 0.5
δ = 1
Fig. 1: Average forward power dissipation versus
average forward current.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
175
T
(°C)
amb
R
th(j-a)=Rth(j-l)
R
th(j-a)=75°C/W
S=1cm
I
(A)
F(AV)
Fig. 2: Average forward current versus ambient
temperature (
δ = 0.5)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
T
δ=tp/T
tp
Zth(j-a)/Rth(j-a)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Fig. 3: Relative variation of thermal impedance
junction ambient versus pulse duration (Printed
circuit board epoxy FR4).
10
100
1
10
100
1000
V (V)
R
F=1MHz
V
osc=30mV
T
j=25°C
C(pF)
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
(V)
FM
T
j=25°C
(Maximum values)
T
j=125°C
(Maximum values)
T
j=125°C
(Maximum values)
T
j=125°C
(Typical values)
T
j=125°C
(Typical values)
I
(A)
FM
Fig. 4:
Forward voltage drop versus forward
current.
0
10
20
30
40
50
60
70
80
90
100
1
10
100
1000
dI /dt(A/s)
F
I
F=3A
V
R=100V
T
j=125°C
T
j=25°C
t
(ns)
RR
Fig. 6: Reverse recovery time versus dIF/dt (90%
confidence).
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