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参数资料
| 型号： | STTH806TTI |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 49K |
| 代理商： | STTH806TTI |
1/5
STTH806TTI
February 2003 - Ed: 4B
TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE
The
TURBOSWITCH
“H”
is
an
ultra
high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dIF/dt.
DESCRIPTION
s
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS
MODE
POWER
FACTOR
CORRECTORS
AND
HARD
SWITCHING
CONDITIONS.
s
DESIGNED FOR HIGH DI/DT OPERATION.
s
ULTRA-FAST
RECOVERY
CURRENT
TO
COMPETE
WITH
GaAs
DEVICES.
SIZE
DIMINUTION OF MOSFET AND HEATSINKS
ALLOWED.
s
INTERNAL CERAMIC INSULATED PACKAGE
ALLOWS
FLEXIBLE
HEATSINKING
ON
COMMON OR SEPARATE HEATSINK.
s
MATCHED
DIODES
FOR
TYPICAL
PFC
APPLICATION WITHOUT VOLTAGE BALANCE
NETWORK.
s
INSULATED VERSION: :
Insulated voltage = 2500 V(RMS)
Capacitance = 7 pF
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
RMS forward current
14
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
80
A
Tstg
Storage temperature range
-65 +150
°C
Tj
Maximum operating junction temperature
+ 150
°C
ABSOLUTE RATINGS (limiting values for both diodes in series)
IF(AV)
8A
VRRM
600 V (in series)
Tj (max)
150 °C
VF (max)
2.6 V
IRM (typ.)
4 A
MAJOR PRODUCTS CHARACTERISTICS
1
2
3
12
3
Insulated TO-220AB
TM: TURBOSWITCH is a trademark of STMicroelectronics
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| SU2L | 1 A, 100 V, SILICON, SIGNAL DIODE |
| SU4L | 1 A, 200 V, SILICON, SIGNAL DIODE |
| SU2 | 1 A, 100 V, SILICON, SIGNAL DIODE |
| SU1 | 1 A, 50 V, SILICON, SIGNAL DIODE |
| SU3 | 1 A, 150 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STTH806TTI | 制造商:STMicroelectronics 功能描述:DIODE ULTRA FAST 2X8A |
| STTH806TTIF5 | 制造商:STMicroelectronics 功能描述: |
| STTH80S06W | 功能描述:DIODE TURBO2 600V 80A DO247 制造商:stmicroelectronics 系列:- 包装:管件 零件状态:有效 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:600V 电流 - 平均整流（Io）:80A 不同 If 时的电压 - 正向（Vf）:2.2V @ 20A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:75ns 不同?Vr 时的电流 - 反向漏电流:50μA @ 600V 不同?Vr，F 时的电容:- 安装类型:通孔 封装/外壳:DO-247-2（直引线） 供应商器件封装:DO-247 工作温度 - 结:-40°C ~ 175°C 标准包装:30 |
| STTH810 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Ultrafast recovery - high voltage diode |
| STTH810D | 功能描述:整流器 Ultrafast recovery high voltage diode RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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