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参数资料
| 型号： | STTH9012TV2 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 45 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, ISOTOP-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 144K |
| 代理商： | STTH9012TV2 |
Characteristics
STTH9012TV
2/8
1
Characteristics
When the diodes are used simultaneously:
T
j(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 1.40 x IF(AV) + 0.0089 IF
2
(RMS)
Table 1.
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
IF(RMS)
RMS forward current
150
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 75° C per diode
45
A
IFRM
Repetitive peak forward current
tp = 5 s, F = 5 kHz square
600
A
IFSM
Surge non repetitive forward
current
tp = 10 ms Sinusoidal
420
A
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature
150
°C
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
0.74
°C/W
Total
0.42
Rth(c)
Coupling thermal resistance
0.1
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25° C
VR = VRRM
30
A
Tj = 125° C
30
300
VF
(2)
Forward voltage drop
Tj = 25° C
IF = 45 A
2.10
V
Tj = 125° C
1.25
1.90
Tj = 150° C
1.20
1.80
1.
Pulse test: tp = 5 ms, δ < 2 %
2.
Pulse test: tp = 380 s, δ < 2 %
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