参数资料
型号: SUF30G-E3/23
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 3 A, 400 V, SILICON, RECTIFIER DIODE
封装: ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN
文件页数: 2/5页
文件大小: 81K
代理商: SUF30G-E3/23
www.vishay.com
2
Document Number 88754
18-May-06
Vishay General Semiconductor
SUF30G & SUF30J
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Thermal resistance from junction to ambient at 0.200" (5.0 mm) lead length with both leads attached to heat sink
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SUF30G
SUF30J
UNIT
Maximum instantaneous
forward voltage (1)
at 3.0 A
VF
1.8
2.0
V
Maximum peak reverse current
at rated peak reverse voltage
TA = 25 °C
TA = 100 °C
IR
10
100
A
Maximum reverse recovery time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
35
ns
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
60
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SUF30G
SUF30J
UNIT
Typical thermal resistance (1)
RθJA
25
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SUF30J-E3/54
1.834
54
800
13" Diameter Paper Tape & Reel
SUF30J-E3/73
1.834
73
300
Ammo Pack Packaging
Figure 1. Forward Current Derating Curve
20
40
60
80
100
120
140
160
0
0.5
1.0
1.5
2.0
2.5
3.0
0.78 x 0.78 x 0.04"
(20 x 20 x 1 mm)
Copper Plate
0.200" (5 mm)
Lead Length
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
Ambient Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
1
10
100
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
TA = 60 °C
8.3 ms Single Half Sine-Wave
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