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参数资料
| 型号： | SUM25FTX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.5 A, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 76K |
| 代理商： | SUM25FTX |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0038C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SUM _ _ F _ _ __
│
└
│
└
│
└
└ Screening2/ __ = None
TX = TX Level
TXV = TXV Level
S = S Level
Package
___ = Axial
SMS = Surface Mount Square Tab
Recovery Time
F = Fast
Voltage
20 = 2000 V
25 = 2500 V
30 = 3000 V
35 = 3500 V
40 = 4000 V
50 = 5000 V
SUM20F & FSMS
thru
SUM50F & FSMS
0.5 AMP
2000-5000 VOLTS
180 nsec
HIGH VOLTAGE
RECTIFIER
FEATURES:
Fast Recovery: 180 nsec Maximum
PIV to 5000 Volts
Hermetically Sealed Axial and Surface Mount
Package
Void-Free Construction
Metallurgically Bonded
175C Maximum Operating Temperature
TX, TXV, and Space Level Screening Available 2/
ELECTRICAL CHARACTERISTICS
Part
Number
Peak
Inverse
Voltage
Average
Rectifier
Current
Maximum
Reverse Current
Maximum
Forward
Voltage
Maximum
Surge
Current
(1 Cycle)
Maximum
Reverse
Recovery
Time
Maximum
Junction
Capacitance
Typical
Thermal
Impedance
Symbol
PIV
IO
IR
VF
IFSM
tRR
CJ
RθJL/RθJE
Units
V
mA
μA
Volts
Amps
Nsec
pF
C/W
Conditions
25C
100C
25C
@ PIV
100C
@ PIV
25C
@ IO
25C
8.3ms Pulse
25C
IF= 0.5 A
IR= 1.0 A
IRR= 0.25 A
25C
VR= 100 V
fT= 1 MHZ
L = 3/8”
SUM20F
2000
500
300
1.0
15
8
25
180
10
16
SUM25F
2500
500
300
1.0
15
8
25
180
10
16
SUM30F
3000
500
300
1.0
15
11
25
180
10
16
SUM35F
3500
500
300
1.0
15
11
25
180
10
16
SUM40F
4000
500
300
1.0
15
11
25
180
10
16
SUM50F
5000
500
300
1.0
15
11
25
180
10
16
1/ For Ordering Information, Price, and Availability – Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Operating and testing over 10,000 V/inch may require encapsulation or immersion in a
suitable dielectric material.
4/ Max. forward voltage measured with instantaneous forward pulse of 300sec minimum.
5/ Max. Lead/End Tab temp. for soldering is 250°C, 3/8” from case for 5 sec maximum.
6/ Operating and storage temperature: -65°C to +175°C.
Axial
Surface Mount
Square Tab
相关PDF资料 |
PDF描述 |
|---|---|
| SUM30FSMSS | 0.5 A, SILICON, SIGNAL DIODE |
| SUM30FSMSTX | 0.5 A, SILICON, SIGNAL DIODE |
| SUM30FS | 0.5 A, SILICON, SIGNAL DIODE |
| SUM30FTX | 0.5 A, SILICON, SIGNAL DIODE |
| SUM35FTXV | 0.5 A, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SUM25UF | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:0.4 AMPS 2000 - 5000 VOLTS 60 nsec HIGH VOLTAGE ULTRA FAST RECTIFIER |
| SUM25UFSMS | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:0.4 AMPS 2000 - 5000 VOLTS 60 nsec HIGH VOLTAGE ULTRA FAST RECTIFIER |
| SUM27N20-78 | 功能描述:MOSFET 200V 27A 150W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUM27N20-78_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S), 175Celsius MOSFET |
| SUM27N20-78-E3 | 功能描述:MOSFET 200V 27A 150W 78mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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