参数资料
型号: SUM50FS
厂商: SOLID STATE DEVICES INC
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.5 A, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED PACKAGE-2
文件页数: 2/2页
文件大小: 76K
代理商: SUM50FS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0038C
DOC
PACKAGE OUTLINE: Axial
B
C
A
D
DIMENSIONS
DIM
MIN
MAX
A
0.065”
0.165”
B
---
0.300”
C
0.047”
0.053”
D
1.00”
––
PACKAGE OUTLINE: Surface Mount Square Tab
C
B
A
D
DIMENSIONS
DIM
MIN
MAX
A
0.170”
0.180”
B
0.285”
0.325”
C
0.020”
0.030”
D
0.002”
––
Notes:
Consult manufacturing for operating curves.
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHB15FSMS
thru
SHB40FSMS
相关PDF资料
PDF描述
SUM30FSMS 0.5 A, SILICON, SIGNAL DIODE
SUM40FSMS 0.5 A, SILICON, SIGNAL DIODE
SUM20FSMSS 0.5 A, SILICON, SIGNAL DIODE
SUM25FS 0.5 A, SILICON, SIGNAL DIODE
SUM40FTXV 0.5 A, SILICON, SIGNAL DIODE
相关代理商/技术参数
参数描述
SUM50N03 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SPICE Device Model SUM50N03-13LC
SUM50N03-13LC 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Current-Sensing Power MOSFETs
SUM50N03-13LC-E3 功能描述:MOSFET 30V 50A 83W w/Sense Terminal RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUM50N06-16L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S), 175C MOSFET, Logic Level
SUM50N06-16L-E3 功能描述:MOSFET 60V 50A 93W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube